Porous GaP Multilayers Formed by Electrochemical Etching
نویسندگان
چکیده
منابع مشابه
Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions
Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
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We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer sh...
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Porous silicon sPSid layers have been anodically etched under polarized illumination, and the degree of linear polarization of their photoluminescence (PL) was measured. The etching conditions were chosen such that the resulting PSi layers were thin enough for interference fringes to appear in their PL spectra. Experimental results show a sinusoidal variation in the degree of linear polarizatio...
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Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region exhibited 'sponge', 'mountain' and 'column'-type morphologies. Among them, the sponge-type struct...
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ژورنال
عنوان ژورنال: Electrochemical and Solid-State Letters
سال: 2002
ISSN: 1099-0062
DOI: 10.1149/1.1466935